page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures low equivalent on - resistance marking: 491 maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t col l ector - ba s e v o l t age v cbo 80 v col l ector - emitter v o l t age v ceo 6 0 v emitter - base v o l t a g e v ebo 5 v col l ector cur re n t - conti n u o us i c 1 000 m a col l ector p o w e r dissi p a t i on p c 2 50 m w juncti o n t emperature t j 150 s torage t e mp e rature t stg - 55 to +150 electrical charac teristics (tamb=25 unless otherwise specified) p arame t e r s ym bol t es t con diti o ns m in t yp m ax u nit collector - base breakd o w n v o l t age v cbo i c = 10 0 a,i e =0 80 v c o llect o r - emitter b re a k d o w n v o l t a g e v ceo 1 i c =10ma,i b =0 60 v emitter - ba s e breakd o w n v o l t age v ebo i e = 10 0 a,i c =0 5 v collector cut - off current i cbo v cb =60 v ,i e =0 0.1 a emitter cut - off current i ebo v eb = 4 v ,i c =0 0.1 a dc cur r ent gain h fe(1) v ce = 5 v ,i c = 1 ma 100 h fe(2) 1 v ce = 5 v ,i c =50 0 ma 100 300 h fe(3) 1 v ce = 5 v ,i c = 1 a 80 h fe(4) 1 v ce = 5 v ,i c = 2 a 30 collecto r - emitter satu r ation v o l t age v ce(sat)1 1 i c = 500ma,i b =50ma 0.25 v v ce(sat)2 1 i c = 1 a,i b =100ma 0.5 v ba s e - emitt e r saturati o n v o l t a g e v be(sat) 1 i c = 1 a,i b =100ma 1.1 v base - emitter v o l t age v be 1 v ce = 5 v ,i c =1a 1 v t r a n s ition fr e qu e n c y f t v ce =10 v ,i c =50ma,,f=100mhz 150 mhz collector outp u t ca p aci t ance c ob v cb =10 v ,f = 1mhz 10 pf 1measured under pulsed conditions, pulse width=300 s, duty cycle 2%. fmm t491 ( n p n ) 1. base 2. emitter sot - 23 3. collecto
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. f mm t 491 typical characteristics
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